我們的研究成果包括：

我們在學術領域出版過的文獻範疇涉及：  

• 室內與環境
• 空氣淨化系統
• 物料化學
• 記憶體裝置

室內與環境

"Quantification of Indoor TVOC Levels from Different Sources in Mechanically Ventilated Building"s,
Journal of Indoor + Built Environment, Vol. 11. pp.340-350, 2002

"Quantification of Indoor VOCs in Twenty Mechanically Ventilated Buildings in Hong Kong",
Atmospheric Environment, Vol. 35(34), pp. 5895-5913, 2001

"Feasibility Study of an Indoor Air Quality Measurement Protocol on 12 Parameters in Mechanically Ventilated and Air Conditioned Buildings", Journal of Indoor + Built Environment, Vol. 10(1), pp. 3-19, 2001

"Characterization of Volatile Organic Compounds in Office/ Residential Buildings in Hong Kong",
The 3rd International Symposium on Heating, Ventilation and Air Conditioning Proceedings, Vol. 1, pp.171-180, 1999

"Characterization of Volatile Organic Compounds in Office Buildings in Hong Kong",
Indoor Air '99 Proceedings, Vol. 2, pp. 442-447, 1999

"Development of Demand Control Strategy in Buildings Using Radon and Carbon Dioxide Level"s,
Indoor Air '99 Proceedings, Vol. 1, pp. 48-53, 1999

"The Use of Zeolite and Oxidant Generating Devices in Air Cleaning",
Journal of Indoor + Built Environment, Vol. 13, pp. 45-51, 2004.

"Confined Catalytic Oxidation of Volatile Organic Compounds by Transition Metal Containing Zeolites and Ionizer",
Atmospheric Environment, Vol. 37(38), pp.5433-5437, 2003.

"The Use of Synthetic Zeolite in Indoor Air Quality Control",
Symposium on Indoor Air Quality and Energy Efficient Technology Proceedings, HKSAR, pp. 51-59, 2001.

"Synthesis of elliptical vanadoborates housing bimetallic centers [Zn4-(B2O4H2)(V10B28O74H8)] 8- and [Mn-4(C2O4)(V10B28O74H8)]10-, Chemical Communications", (14): 1827-1829 2005

"Organically Modified Transition Metal Vanadates: New Directions in Polyoxometallate Clusters,
Templated Porous Oxides and Hybrid Solids", Eighth Symposium on Chemistry Postgraduate Research in Hong Kong, 2001, O-6

"Cyclic Vanadate Ligands in Two New Porous Oxide Solids",
Seventh Symposium on Chemistry Postgraduate Research in Hong Kong, 2000, I-70

"New Organo-ceramic Hybrid Materials in the Transition Metal Vanadate System",
Seventh Symposium on Chemistry Postgraduate Research in Hong Kong, 2000, I-71

"Synthesis and Magnetic Studies of Organotemplated Manganese Divanadates",
Seventh Symposium on Chemistry Postgraduate Research in Hong Kong, 2000, I-72

"Synthesis and Properties of Vanadoborate Cluster Materials",
Tenth International Conference on Boron Chemistry, 1999, IB-6

"Synthesis of Porous Metalloborate Cluster Materials",
Sixth Symposium on Chemistry Postgraduate Research in Hong Kong, 1999, I-7

"Electronic Structure and Molecular Magnetism of Vanadium Borate Clusters with Partial Spin Pairing",
44th Annual Conference on Magnetism and Magnetic Materials,1999, 120, DS-05

"SOI flash memory scaling limit and design consideration based on 2-D analytical modeling,"
IEEE Trans. Electron Devices, vol. 51, Dec 2004, pp. 2054-2060

"Multi-bit MONOS Nonvolatile Mmeory Based on Double-Gate Technology,"
Proceeding of the 7th ICSSICT, pp. 691-694, Oct 2004, Beijing

"Effects of floating body on double polysilicon partially depleted SOI nonvolatile memory cell,"
IEEE Electron Device Letter, vol. 24, Feb 2003, pp. 75-77

"Transient Behavior of Partially Depleted SOI Non-Volatile Memory Cell and Its Impacts on Device Scaling,"
Proceeding of SSDM 2002

"Improved Oxide Quality on Polysilicon by Enhanced Metal-Induced-Lateral-Crystallization (MILC),"
Proceeding of Tencon 2001, pp. 844-846

"High quality thermal oxide on LPSOI formed by high temperature enhanced MILC,"
IEEE Electron Device Letter, vol. 22, Aug 2001, pp. 384-386

"Improved thin-film transistor (TFT) characteristics on chemical-mechanically polished polycrystalline silicon film,"
Proceeding of 1999 IEEE Hong Kong Electron Devices Meeting, pp 38-41

C "Improved Thin Dielectric Characteristics on Chemical-Mechanically Polished Polycrystalline Silicon Film,"
Proceeding of 1999 International Symposium on Integrated Circuit, Devices & System, pp. 254-257

"Direct Tunneling Stress-Induced Leakage Current in NMOS Devices with Ultra-thin Gate Oxide," accepted for IRPS 05

"Optimization of Base-to-Emitter Spacer Thickness to Maximize the Frequency Response of Bipolar Transistors,"
Solid-State Electronics, vol. 49, April 2005, pp. 554-557

"Optimizations of Spacer Thickness for Minimizing Noise Performance of Bipolar Transistors",
Proceedings of the 2004 International Electron Devices and Materials Symposia (IEDMS), pp. 115-117,
Dec. 20-23, 2004, Hsinchu, Taiwan, R.O.C.

"A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM,"
IEEE Trans. Electron Devices, vol. 50, Sept 2003, pp. 1952-1960

"A 2-bit MONOS nonvolatile memory cell based on asymmetric double gate MOSFET structure,"
IEEE Electron Device Letter, vol. 24, Aug 2003, pp. 518-520